| dc.contributor.author | Mushonga, Paul | |
| dc.contributor.author | Onani, Martin O. | |
| dc.contributor.author | Madiehe, Abram M. | |
| dc.contributor.author | Meyer, Mervin | |
| dc.date.accessioned | 2018-01-15T08:06:55Z | |
| dc.date.available | 2018-01-15T08:06:55Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | Mushonga, P. et al. (2013). One-pot synthesis and characterization of InP/ZnSe semiconductor nanocrystals. Materials Letters, 95: 37-39 | en_US |
| dc.identifier.issn | 0167-577X | |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.matlet.2012.12.102 | |
| dc.identifier.uri | http://hdl.handle.net/10566/3387 | |
| dc.description.abstract | We report on the one-pot synthesis of InP/ZnSe quantum dots (QDs) using a precursor-based colloidal synthesis in a noncoordinating solvent environment. The structural and optical studies were carried out on the as-prepared InPQDs. The quantum yield of the nanocrystals was recorded as 6% and a 1.4 times reduction in the ratio of trap-related emission to band edge emission was observed on ZnSe passivation of the InPQDs. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | This is the author-version of the article published online at: http://dx.doi.org/10.1016/j.matlet.2012.12.102 | |
| dc.subject | InP | en_US |
| dc.subject | ZnSe | en_US |
| dc.subject | Quantum dots | en_US |
| dc.subject | Semiconductor nanocrystals | en_US |
| dc.subject | Photoluminescence | en_US |
| dc.subject | Passivation | en_US |
| dc.title | One-pot synthesis and characterization of InP/ZnSe semiconductor nanocrystals | en_US |
| dc.type | Article | en_US |
| dc.privacy.showsubmitter | FALSE | |
| dc.status.ispeerreviewed | TRUE | |
| dc.description.accreditation | Web of Science | |
