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dc.contributor.authorNwachukwu, Iheke Micheal
dc.contributor.authorNwanya, Assumpta Chinwe
dc.contributor.authorOsuji, Rose
dc.date.accessioned2021-11-25T12:47:15Z
dc.date.available2021-11-25T12:47:15Z
dc.date.issued2021-06
dc.identifier.citationNwachukwu, I et al.. (2021). Nanostructured Mn-doped CeO2 Thin films with Enhanced Electrochemical Properties for Pseudocapacitive Applications. Journal of Alloys and Compounds. 886. 161206. 10.1016/j.jallcom.2021.161206en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2021.161206
dc.identifier.urihttp://hdl.handle.net/10566/7049
dc.description.abstractCerium oxides with variable oxidation states, high interfacial charge transfer rate have demonstrated to be a potential pseudocapacitive material. In this paper, we present the structural and electrochemical properties of undoped and Mn-doped CeO2synthesized using successive ionic layer adsorption and reaction(SILAR) method. The structural results as obtained from x-ray diffraction (XRD) confirmed the cubic fluorite structure of CeO2 which was unaltered despite the doping concentration. However, a tensile strain of ~2.3% was observed due to ionic radii difference. The topography showed a porous network of nanograins, accounting for strong redox interfacial charge transfer. A specific capacitance of 690 Fg−1 was obtained for 5 wt% Mn-doped CeO2, from cyclic voltammetry curve at a scan rate of 10 mV/s. This value is considerably higher than what was obtained for the undoped ceria, indicating that doping with Mn improved the electrochemical performance of the ceria films.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectCerium oxideen_US
dc.subjectManganeseen_US
dc.subjectPseudocapacitorsen_US
dc.subjectSILARen_US
dc.titleNanostructured Mn-doped CeO2 thin films with enhanced electrochemical properties for pseudocapacitive applicationsen_US
dc.typeArticleen_US


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