dc.contributor.author | Nwachukwu, Iheke Micheal | |
dc.contributor.author | Nwanya, Assumpta Chinwe | |
dc.contributor.author | Osuji, Rose | |
dc.date.accessioned | 2021-11-25T12:47:15Z | |
dc.date.available | 2021-11-25T12:47:15Z | |
dc.date.issued | 2021-06 | |
dc.identifier.citation | Nwachukwu, I et al.. (2021). Nanostructured Mn-doped CeO2 Thin films with Enhanced Electrochemical Properties for Pseudocapacitive Applications. Journal of Alloys and Compounds. 886. 161206. 10.1016/j.jallcom.2021.161206 | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.jallcom.2021.161206 | |
dc.identifier.uri | http://hdl.handle.net/10566/7049 | |
dc.description.abstract | Cerium oxides with variable oxidation states, high interfacial charge transfer rate have demonstrated to be a
potential pseudocapacitive material. In this paper, we present the structural and electrochemical properties
of undoped and Mn-doped CeO2synthesized using successive ionic layer adsorption and reaction(SILAR)
method. The structural results as obtained from x-ray diffraction (XRD) confirmed the cubic fluorite
structure of CeO2 which was unaltered despite the doping concentration. However, a tensile strain of ~2.3%
was observed due to ionic radii difference. The topography showed a porous network of nanograins, accounting for strong redox interfacial charge transfer. A specific capacitance of 690 Fg−1 was obtained for
5 wt% Mn-doped CeO2, from cyclic voltammetry curve at a scan rate of 10 mV/s. This value is considerably
higher than what was obtained for the undoped ceria, indicating that doping with Mn improved the
electrochemical performance of the ceria films. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.subject | Cerium oxide | en_US |
dc.subject | Manganese | en_US |
dc.subject | Pseudocapacitors | en_US |
dc.subject | SILAR | en_US |
dc.title | Nanostructured Mn-doped CeO2 thin films with enhanced electrochemical properties for pseudocapacitive applications | en_US |
dc.type | Article | en_US |