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Investigations on the characterization of ion implanted hexagonal boran nitride
(Elsevier, 2013)
The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an
ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 x 10 14–1 x 10 16
ions/cm2 and ...