Facile synthesis of NiSe2:α-Fe2O3 thin film: physical, optical and photoelectronic properties
dc.contributor.author | Visser, E | |
dc.contributor.author | Cummings, F | |
dc.contributor.author | Cory, N | |
dc.date.accessioned | 2023-06-26T13:52:07Z | |
dc.date.available | 2023-06-26T13:52:07Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Visser, E., Cory, N., Mkhari, O., Chamier, J., Cummings, F. and Chowdhury, M., 2023. Facile synthesis of NiSe2: α-Fe2O3 thin film: Physical, optical and photoelectronic properties. Thin Solid Films, 774, p.139837. | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2023.139837 | |
dc.identifier.uri | http://hdl.handle.net/10566/9156 | |
dc.description.abstract | In this study, a highly scalable approach to fabricating NiSe2:α-Fe2O3 heterojunction thin film in the absence of a dehydration step or lattice parameter matching was established. The attachment of NiSe2 to α-Fe2O3 leads to an 82% and 97% decrease in charge transfer resistance (with and without illumination respectively) compared to pristine α-Fe2O3. The magnitude of the open circuit potential increased from approximately -0.30 V to -0.42 V vs Ag/AgCl, providing a stronger electric field for charge carrier separation. Charge transfer efficiency was calculated by using a ratio of charge carriers removed and those produced in the bulk. Scanning electron microscopy coupled with the electrodeposition current-time transients study proved that the attachment process involved the progressive nucleation of NiSe2 and the simultaneous cathodic reduction of α-Fe2O3. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Thin Solid Films | en_US |
dc.subject | Photoelectronic | en_US |
dc.subject | Electrodeposition | en_US |
dc.subject | Thin film | en_US |
dc.subject | Ferric oxide | en_US |
dc.subject | Facile synthesis | en_US |
dc.title | Facile synthesis of NiSe2:α-Fe2O3 thin film: physical, optical and photoelectronic properties | en_US |
dc.type | Article | en_US |