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dc.contributor.authorSchneider, J.
dc.contributor.authorZiegler, T.
dc.contributor.authorWagenpfeil, M.
dc.date.accessioned2021-09-21T21:38:02Z
dc.date.available2021-09-21T21:38:02Z
dc.date.issued2021
dc.identifier.citationWagenpfeil, M. & Ziegler, T. & Schneider, J. & Fieguth, A. & Murra, M. & Schulte, Denny & Althueser, L. & Huhmann, C. & Weinheimer, C. & Michel, Tayoumkam & Anton, G. & Adhikari, G. & Kharusi, S. & Angelico, E. & Arnquist, I. & Badhrees, I. & Bane, J. & Beck, D. & Belov, Vladimir. (2021). Reflectivity of VUV-sensitive Silicon Photomultipliers in Liquid Xenon.en_US
dc.identifier.issn1748-0221
dc.identifier.uri10.1088/1748-0221/16/08/P08002
dc.identifier.urihttp://hdl.handle.net/10566/6746
dc.description.abstractSilicon photomultipliers are regarded as a very promising technology for nextgeneration, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0 45 angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200.en_US
dc.language.isoenen_US
dc.publisherIOP Publishingen_US
dc.subjectPhoton detectors for UVen_US
dc.subjectIR photonsen_US
dc.subjectAPDsen_US
dc.subjectPIN diodesen_US
dc.subjectSolid stateen_US
dc.titleReflectivity of VUV-sensitive silicon photomultipliers in liquid Xenonen_US
dc.typeArticleen_US


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