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Comparative study: the effect of annealing conditions on the properties of P3HT:PCBM blends
(Springer Verlag, 2013)
This paper presents a detailed study on the role of various annealing treatments on organic poly(3-hexylthiophene) and [6]-phenyl-C61-butyric acid methyl ester blends under different experimental conditions. A combination ...
Self-catalytic growth of tin oxide nanowires by chemical vapor deposition process
(Hindawi, 2013)
We report on the synthesis of tin oxide (SnO2) nanowires by a chemical vapor deposition (CVD) process. Commercially bought
SnO nanopowders were vaporized at 1050∘C for 30 minutes with argon gas continuously passing through ...
Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates
(Elsevier, 2013)
We examined the chemical, structural, mechanical and optical properties of amorphous hydrogenatedsilicon nitride thin films deposited by hot-wire chemical vapour deposition using SiH4, NH3and H2gases at total flow rates ...
Annealing effect of hybrid solar cells based on poly (3-hexylthiophene) and zinc-oxide nanostructures
(Elsevier, 2013)
The structural growth and optical and photovoltaic properties of the organic–inorganic hybrid
structures of zinc
oxide (ZnO)-nanorods/poly-3-hexylthiophene (P3HT) and two variations of organic polymer blends of
ZnO/ ...
Visible and IR photoluminescence of c-FeSi@a–Si core–shell nano-fibres produced by vapour transport
(Elsevier, 2013)
The procedures for the synthesis of amorphous ε-FeSi/Sicore–shell nanofibres by vapour transport in a
CVD configuration are reported. Crystallite studies by the Williamson-Hall method show the sizes to be
typically about ...
Effect of the annealing atmosphere on the layer interdiffusion in Pd/Ti/Pd multilayer stacks deposited on pure Ti and Ti-alloy substrates
(University of the Western Cape, 2019)
Pd(50 nm)/Ti(25 nm)/Pd(50 nm) multilayer stack has been deposited on Ti and Ti6Al4V substrates; we have studied the intermixing of layers upon annealing at the hydrogenation temperature of 550 °C, under vacuum, H/Ar gas ...